Datasheet > 2SB267100MA

2SB267100MA

更新时间： 2024-09-23 06:19:51

品牌	Logo	应用领域
士兰微 - SILAN		肖特基二极管
页数	文件大小	规格书
1页	20K
描述
LOW IR SCHOTTKY BARRIER DIODE CHIPS

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2SB267100MA 数据手册

2SB267100MA

2SB267100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION

2SB267100MA is scahottky barrier diode chi

fabricated in silicon epitaxial planar technology;

Due to special schottky barrier structure, thcehips

have very low reverse leakage current (icaltyp

I_R=0.002mA@Vr=100V

operation junction temperature;

Low power losses, high efficiency;

)

and

maximum °C150

Chip Topography and Dimensions

Guard ring construction for transient protection;

High ESD capability;

La: Chip Size: 2670mm;

Lb: Pad Size: 2470mm;

High surge capability;

Packaged products are widely used in switching

power suppliers, polarity protection circuits and

other electronic circuits;

ORDERING SPECIFICATIONS

Product Name

Specification

Chip Size: 26m7m0 X 2670mm;

Chip Thickness: 280±20mm;

2SB267100MAYY

For Axial leads package

Have two top side electrode materials for cuostmer

to choose, detail refer to ordering specifications.

For Au and AlSi wire bonding

package

2SB267100MAYL

ABSOLUTE MAXIMUM RATINGS

Parameters

Symbol

Ratings

Unit

Maximum Repetitive Peak Reverse Voltage

Average Forward Rectified Current

Peak Forward Surge Current@8.3ms

Maximum Operation Junction Temperature

Storage Temperature Range

RRM

100

FAV

150

FSM

°C

STG

•40~150

ELECTRICAL CHARACTERISTICS (Tamb=25ć)

Parameters

Reverse Voltage

Symbol

Test Conditions

I =0.5mA

Min.

Max.

Unit

100

••

Forward Voltage

Reverse Current

I =10A

••

0.85

0.5

V =100V

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.0

2007.04.27

Http: www.silan.com.cn

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