Datasheet > 2SB166040ML

2SB166040ML

更新时间： 2024-09-25 07:30:07

品牌	Logo	应用领域
士兰微 - SILAN		肖特基二极管
页数	文件大小	规格书
1页	17K
描述
SCHOTTKY BARRIER DIODE CHIPS

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2SB166040ML 数据手册

2SB166040ML

2SB166040ML SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION

2SB166040ML is a schottky barrier diode chips

fabricated in silicon epitaxial planar technology;

Low power losses, high efficiency;

Guard ring construction for transient protection;

High ESD capability;

High surge capability;

Packaged products are widely used in switching

power suppliers, polarity protection circuits and

other electronic circuits.;

Chip Topography and Dimensions

La: Chip Size: 1660mm;

Lb: Pad Size: 1565mm;

Chip Size:16m6m0 X 1660mm;

Chip Thickness: 280±20mm;

ORDERING SPECIFICATIONS

Product Name

Specification

2SB166040MLYY

For axial leads package

ABSOLUTE MAXIMUM RATINGS

Parameters

Symbol

Ratings

Unit

Maximum Repetitive Peak Reverse Voltage

Average Forward Rectified Current

Peak Forward Surge Current@8.3ms

Maximum Operation Junction Temperature

Storage Temperature Range

RRM

FAV

150

FSM

125

°C

•40~125

STG

ELECTRICAL CHARACTERISTICS (Tamb=25°C)

Parameters

Reverse Voltage

Symbol

Test Conditions

I =0.5mA

Min.

••

Max.

••

Unit

Forward Voltage

Reverse Current

I =5A

0.70

0.5

V =60V

••

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.0

2007.04.27

Http: www.silan.com.cn

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