Datasheet > 2SB1589

2SB1589

更新时间： 2024-11-30 07:30:07

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页数	文件大小	规格书
1页	50K
描述
Silicon PNP Epitaxial Planar Type

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中文翻译

获取价格

数据手册

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2SB1589 数据手册

SMD Type

Transistors

Silicon PNP Epitaxial Planar Type

2SB1589

Features

Low collector to emitter saturation voltage VCE(sat).

Large collector power dissipation PC.

Mini Power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CP

Rating

Unit

-10

Collector-emitter voltage

Emitter-base voltage

Peak collector current

Collector current

-10

-7

-2

-1.5

I^C

Collector power dissipation

Junction temperature

Storage temperature

P^C

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

VCB= -7 V, IE = 0

Min

Typ

Max

-1

Unit

ìA

Collector cutoff current

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

ICBO

V^CBO

V^CEO

V^EBO

h^FE

IC = -10 ìA, IE = 0

IC = -1 mA, IB = 0

-10

-7

IE = -10 ìA, IC = 0

VCE = -1 V, IC = -400 mA

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

200

700

V^CE(sat)IC = -1A, IB = - 25 mA

-0.24 -0.35

MHz

f^T

VCB = -6 V, IE = 50 mA, f = 200 MHz

VCB = -10V, IE = 0, f = 1 MHz

IF = -500 mA

190

6.5

1.3

Collector output capacitance

Forward voltage

C^ob

V^F

Marking

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中文翻译

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