2SB1570Y

更新时间： 2024-11-12 13:02:15

品牌	Logo	应用领域
三垦 - SANKEN		晶体稳压器晶体管功率双极晶体管放大器局域网
页数	文件大小	规格书
1页	27K
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中文翻译

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数据手册

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2SB1570Y 数据手册

(70Ω)

Darlington 2 S B1 5 7 0

Equivalent circuit

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401)

Application : Audio, Series Regulator and General Purpose

External Dimensions MT-200

■Absolute maximum ratings

(Ta=25°C)

■Electrical Characteristics

2SB1570

Unit

2SB1570

Symbol

I^CBO

Conditions

Symbol

Unit

±0.2

6.0

±0.3

36.4

–100max

V^CB=–160V

V^EB=–5V

V^CBO

VCEO

VEBO

–160

µA

±0.2

24.4

2.1

–100max

–150min

5000min

–2.5max

–3.0max

50typ

±0.1

2-ø3.2

–150

IEBO

µA

I^C=–30mA

V(BR)CEO

hFE

–5

–12

V^CE=–4V, IC=–7A

I^C=–7A, IB=–7mA

V^CE=–12V, IE=2A

V^CB=–10V, f=1MHz

VCE(sat)

VBE(sat)

–1

150(Tc=25°C)

150

°C

MHz

+0.2

-0.1

0.65

+0.2

-0.1

230typ

Tstg

COB

–55 to +150

1.05

+0.3

-0.1

hFE Rank O(5000 12000), P(6500 20000), Y(15000 30000)

3.0

±0.1

5.45

■Typical Switching Characteristics (Common Emitter)

Weight : Approx 18.4g

a. Type No.

V^CC

(V)

R^L

(Ω)

I^C

(A)

VBB1

(V)

V^BB2

(V)

I^B1

(mA)

I^B2

(mA)

ton

(µs)

tstg

(µs)

b. Lot No.

–70

–7

–10

–7

0.8typ

3.0typ

1.2typ

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(VCE=–4V)

–12

–10

–8

–6

–4

–2

–3

–12

–10

–8

–2

–10A

–7A

–6

–0.6mA

I^B=–0.4mA

IC=–5A

–1

–4

–2

–4

–6

–0.2 –0.5 –1

–5 –10

–50 –100 –200

–1

–2

–2.5

Collector-Emitter Voltage V^CE(V)

Base Current IB(mA)

Base-Emittor Voltage VBE(V)

–

^j-at Characteristics

h^FEI^CCharacteristics (Typical)

h^FEI^CTemperature Characteristics (Typical)

(VCE=–4V)

50000

40,000

125˚C

Typ

25˚C

10,000

5,000

10000

0.5

–30˚C

5000

0.1

1000

800

–0.2

1,000

50 100

Time t(ms)

500 1000 2000

–0.5

–1

–5

–10 –12

–0.2

–0.5

–1

Collector Current I^C(A)

–5

–10–12

Collector Current IC(A)

–

f^TIE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=–12V)

160

–30

100

–10

–5

120

Typ

–1

–0.5

Without Heatsink

Natural Cooling

–0.1

Without Heatsink

–0.05

0.02 0.05 0.1

0.5

–3

–5

–10

–50

–100 –200

100

125

150

Collector-Emitter Voltage V^CE(V)

Ambient Temperature Ta(˚C)

Emitter Current IE(A)

中文翻译

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与2SB1570Y相关器件

型号	品牌	获取价格	描述	数据表
2SB1571	TYSEMI	获取价格	Low VCE(sat): VCE(sat) -0.35 V Collector to Base Voltage VCBO -50 V
2SB1571	KEXIN	获取价格	Silicon PNP Epitaxial Planar
2SB1571	NEC	获取价格	PNP SILICON EPITAXIAL TRANSISTOR
2SB1571_15	KEXIN	获取价格	PNP Transistors
2SB1571HX	NEC	获取价格	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 5A I(C) \| TO-243
2SB1571-HX	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1571-HX-AZ	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1571HX-T1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,30V V(BR)CEO,5A I(C),TO-243
2SB1571HY	NEC	获取价格	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 5A I(C) \| TO-243
2SB1571-HY	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3

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