Datasheet > 2SB1569

2SB1569

更新时间： 2024-09-24 06:20:15

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	213K
描述
Silicon PNP Power Transistor

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技术参数
数据手册

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2SB1569 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Base Number Matches：	1

2SB1569 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SB1569

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -120V(Min)

·Complement to Type 2SD2400

APPLICATIONS

·Designed for power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-120

-5

UNIT

Collector Current-Continuous

Collector Current-Peak

-1.5

-3.0

I_CM

Collector Power Dissipation

@T_a=25℃

P_C

Collector Power Dissipation

@T_C=25℃

Junction Temperature

Storage Temperature

150

℃

T_J

-55~150

T_stg

isc Website：www.iscsemi.cn

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与2SB1569相关器件

型号	品牌	获取价格	描述	数据表
2SB1569/D	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla
2SB1569/DE	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla
2SB1569/DF	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla
2SB1569/E	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla
2SB1569/F	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla
2SB1569A	ROHM	获取价格	POWER TRANSISTOR
2SB1569A/D	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla
2SB1569AC7	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla
2SB1569AC7/D	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla
2SB1569AC7/DE	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla