2SB1567

更新时间： 2024-01-15 22:17:11

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	88K
描述
isc Silicon PNP Darlington Power Transistor

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2SB1567 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

2SB1567

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -100V(Min)

·High DC Current Gain-

: h_FE= 1000(Min)@ (V_CE= -2V, I_C= -1A)

·Complement to Type 2SD2398

APPLICATIONS

·Designed for high power switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-100

-8

UNIT

Collector Current-Continuous

Collector Current-Peak

-2

I_CM

-3

Collector Power Dissipation

@T_a=25℃

P_C

Collector Power Dissipation

@T_C=25℃

Junction Temperature

Storage Temperature

150

-55~150

℃

T_J

T_stg

isc Website：www.iscsemi.cn

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