Datasheet > 2SB1561U

2SB1561U

更新时间： 2023-12-06 20:10:30

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
4页	1315K
描述
功率三极管

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2SB1561U 数据手册

2SB1561U

PNP Silicon Epitaxial Planar Power Transistor

Medium Power Transistor

Absolute Maximum Ratings (T_a= 25 )

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current - DC

Collector Current - Pulse ¹⁾

-I_C

-I_CP

0.5 ²⁾

P_tot

Total Power Dissipation

Junction Temperature

2 ³⁾

T_J

150

Storage Temperature Range

T_Stg

- 55 to + 150

¹⁾Single pulse, P_W= 10 ms

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

Unit

250 ²⁾

Thermal Resistance, Junction to Ambient

62.5 ³⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

²⁾When mounted on a 40 x 40 x 0.7 mm cermic board

1 / 4

Dated: 25/08/2023 Rev: 03

12 3 4

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