Datasheet > 2SB1440R

2SB1440R

更新时间： 2024-02-18 23:06:05

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	50K
描述
TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 2A I(C) \| SC-62

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中文翻译

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技术参数
数据手册

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2SB1440R 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.71	Base Number Matches：	1

2SB1440R 数据手册

Transistor

2SB1440

Silicon PNP epitaxial planer type

For low-frequency output amplification

Complementary to 2SD2185

Unit: mm

1.5±0.1

4.5±0.1

1.6±0.2

Features

■

●

Low collector to emitter saturation voltage V_CE(sat)

●

Mini Power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing.

45°

0.4±0.08

0.4±0.04

0.5±0.08

1.5±0.1

Absolute Maximum Ratings (Ta=25˚C)

■

3.0±0.15

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–50

marking

–50

–5

–3

1:Base

2:Collector

3:Emitter

EIAJ:SC–62

Mini Power Type Package

I_C

–2

1^*

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

Marking symbol : 1I

T_j

150

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

V_CBO

Conditions

I_C= –10µA, I_E= 0

min

–50

–5

typ

max

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CEO

V_EBO

I_C= –1mA, I_B= 0

I_E= –10µA, I_C= 0

h_FE1

V_CE= –2V, I_C= –200mA

V_CE= –2V, I_C= –1A

120

340

Forward current transfer ratio

h_FE2

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= –1A, I_B= –50mA

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

– 0.2

– 0.85

– 0.3

–1.2

Transition frequency

f_T

MHz

Collector output capacitance

C_ob

^*h_FE1Rank classification

Rank

h_FE1

120 ~ 240

170 ~ 340

12 3

中文翻译

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