Datasheet > 2SB1429

2SB1429

更新时间： 2024-11-24 14:54:55

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
5页	306K
描述
SOT-23

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中文翻译

获取价格

数据手册

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2SB1429 数据手册

P2SB1429

PNP Low Vce(sat) Transistor

SOT-23

Unit: inch(mm)

-20V

-3A

Voltage

Current

Features

 Silicon PNP epitaxial type

 Low Vce(sat) -0.3V(max)@Ic/Ib=-3A/-0.3A

 High collector current capability

 Excellent DC current gain characteristics

 Lead free in compliance with EU RoHS 2011/65/EU

directive

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: SOT-23 Package

 Terminals: Solderable per MIL-STD-750, Method 2026

FIG.194

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

LIMIT

-20

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

-20

Emitter-Base Voltage

-7

Collector Current (DC)

-3

Collector Current (Pulse)

I_CP

-5

Base Current

I_B

-0.3

1.25

100

-55~150

Collector Power Dissipation

P_D

^oC/W

^oC

Typical Thermal Resistance from Junction to Ambient ^{(Note 1)}

Operating Junction and Storage Temperature Range

Note: 1.Mounted on FR4 PCB at 1 inch square copper pad.

R_θJA

T_J,T_STG

November 4,2016-REV.00

Page 1

12 3 4 5

中文翻译

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