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2SB1427 PDF预览

2SB1427

更新时间: 2024-11-23 12:53:39
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TYSEMI /
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1页 74K
描述
Low saturation voltage, typically VCE(sat) =-0.5V at IC/IB =-1A/-50mA.

2SB1427 数据手册

  
Product specification  
2SB1427  
Features  
Low saturation voltage,  
typically VCE(sat) =-0.5V at IC/IB =-1A/-50mA.  
Excellent DC current gain characteristics.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
-20  
-20  
V
-6  
V
Collector current  
-2  
-3  
A
Collector current(Pulse)  
Collector power dissipation  
Junction temperature  
Storage temperature  
ICP *  
PC  
A
0.5  
W
Tj  
150  
Tstg  
-55 to +150  
* Single pulse, Pw=10ms  
Electrical Characteristics Ta = 25  
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
Symbol  
Testconditons  
Min  
-20  
-20  
-6  
Typ  
Max  
Unit  
V
BVCBO IC=-50ìA  
BVCEO IC=-1mA  
BVEBO IE=-50ìA  
V
V
ICBO  
IEBO  
VCE(sat) IC=-1A,IB=-500mA  
VCB=-16V  
-0.5  
-0.5  
-0.5  
820  
ìA  
ìA  
V
Emitter cutoff current  
VEB=-5V  
DC current transfer ratio  
Collector-emitter saturation voltage  
Transition frequency  
hFE  
Cob  
fT  
VCE=-6V, IC=-0.5A  
390  
VCE=-10V, IE=10mA, f=30MHz  
VCB=-10V, IE=0A, f=1MHz  
90  
30  
MHz  
pF  
Output capacitance  
Marking  
Marking  
BJE  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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