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2SB1424 PDF预览

2SB1424

更新时间: 2024-11-24 18:09:59
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
4页 635K
描述
SOT-89

2SB1424 数据手册

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2SB1424  
BIPOLAR TRANSISTOR (PNP)  
FEATURES  
Complementary to 2SD2150  
Low VCE(sat)  
Excellent DC current gain  
Surface Mount device  
SOT-89  
MECHANICAL DATA  
Case: SOT-89  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.055 grams (approximate)  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-20  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
-20  
-6  
V
Emitter-Base Voltage  
V
Collector Current  
-3  
A
Collector Power Dissipation  
PC  
500  
250  
150  
mW  
°C/W  
°C  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
RθJA  
TJ  
Storage Temperature  
TSTG  
-55 ~+150  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol Min Typ Max Unit  
Conditions  
IC=-50uAIE=0  
I =-1mA I =0  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
-20  
-20  
-6  
V
V
C
B
V
IE=-50uAIC=0  
VCB=-20V, IE=0  
VEB=-5V, IC=0  
-1  
-1  
uA  
uA  
Emitter cut-off current  
IEBO  
VCE=-2V, IC=-0.1A  
IC=-2AIB=-0.1A  
DC current gain  
hFE  
120  
390  
-0.5  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
V
VCE=-2V,IC=-0.5A,f=100  
240  
35  
MHz  
pF  
MHz  
VCB=-10V, IE=0, f=1  
Collector output capacitance  
Cob  
MHz  
CLASSIFICATION OF hFE  
Rank  
Q
R
Range  
120-270  
AEQ  
180-390  
AER  
Marking  
1 / 4  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

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