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2SB1424 PDF预览

2SB1424

更新时间: 2024-11-24 14:53:19
品牌 Logo 应用领域
鲁光 - LGE 双极型晶体管
页数 文件大小 规格书
3页 1282K
描述
双极型晶体管

2SB1424 技术参数

极性:PNPCollector-emitter breakdown voltage:20
Collector Current - Continuous:3DC current gain - Min:120
DC current gain - Max:390Transition frequency:240
Package:SOT-89Storage Temperature Range:-55-150
class:Transistors

2SB1424 数据手册

 浏览型号2SB1424的Datasheet PDF文件第2页浏览型号2SB1424的Datasheet PDF文件第3页 
2SB1424  
SOT-89-3L  
SOT-89-3L Plastic-Encapsulate PNP Transistors  
1. BASE  
FEATURES  
2. COLLECTOR  
3. EMITTER  
Excellent DC current gain  
Low collector-emitter saturation voltage  
Complement the 2SD2150  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Value  
-20  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
-20  
V
-6  
V
Collector Current  
-3  
A
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
500  
mW  
/W  
PC  
250  
RθJA  
Tj  
150  
Storage Temperature  
-55~+150  
Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
IC=-50µA,IE=0  
Min  
-20  
-20  
-6  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=-1mA,IB=0  
V
IE=-50µA,IC=0  
V
VCB=-20V,IE=0  
-0.1  
-0.1  
390  
-0.5  
µA  
µA  
IEBO  
VEB=-5V,IC=0  
Emitter cut-off current  
hFE  
VCE=-2V, IC=-0.1A  
IC=-2A,IB=-0.1A  
VCB=-10V,IE=0, f=1MHz  
120  
DC current gain  
VCE(sat)  
Cob  
V
Collector-emitter saturation voltage  
Collector output capacitance  
35  
pF  
VCE=-2V,IC=-0.5A,  
f=100MHz  
fT  
240  
MHz  
Transition frequency  
CLASSIFICATION OF hFE  
Q
R
RANK  
RANGE  
120270  
AEQ  
180390  
AER  
MARKING  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170301-P1  

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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 3A I(C) | SC-62