Datasheet > 2SB1396_15

2SB1396_15

更新时间： 2024-02-01 22:52:44

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1059K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1396_15 数据手册

SMD Type

Transistors

PNP Transistors

2SB1396

1.70 0.1

■ Features

● Low collector to emitter saturation voltage

● Large current capacity

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-15

-10

-7

-3

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

-5

1.3

℃

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-15

-10

-7

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 uA， I

Ic= -1 mA, RBE=∞

= -100 uA， I =0

CB= -12V , I =0

EB= -6V , I =0

E=0

CBO

EBO

-0.1

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-1.5 A, I

B=-30 mA

-0.22 -0.4

=-1.5 A, I

B=-30 mA

-0.9

-1.2

560

CE= -2V, I

= -500 mA

140

DC current gain

hFE

C= -3 A

Collector output capacitance

Transition frequency

Cob

CB= -10V, I

E= 0,f=1MHz

^CE= -2V, I = -300 mA

400

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SB1396-S

140-280

BO S*

2SB1396-T

2SB1396-U

280-560

BO U*

200-400

BO T*

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