2SB1386QGP

更新时间： 2024-11-21 12:59:03

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
3页	367K
描述
Transistor,

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中文翻译

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技术参数
数据手册

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2SB1386QGP 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SB1386QGP 数据手册

CHENMKO ENTERPRISE CO.,LTD

2SB1386PPT

SMALL FLAT

PNP Epitaxial Transistor

VOLTAGE 20 Volts CURRENT 5 Amperes

APPLICATION

* Power driver and Strobe Flash .

FEATURE

* Small flat package. (DPAK)

DPAK

* Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)

* High saturation current capability.

.094 (2.38)

.086 (2.19)

.022 (0.55)

.018 (0.45)

MARKING

* hFE Classification P : P86

Q : Q86

(1) (3)

(2)

R: R86

.028 (0.70)

.019 (0.50)

.035 (0.90)

.024 (0.60)

.181 (4.60)

.268 (6.80)

.252 (6.40)

.023 (0.58)

.018 (0.46)

(3)

(2)

CIRCUIT

1 Base

2 Emitter

(1)

3 Collector ( Heat Sink )

Dimensions in inches and (millimeters)

DPAK

MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )

RATINGS

CONDITION

Open Emitter

SYMBOL

VCBO

UNITS

Volts

2SB1386PPT

Collector - Base Voltage

-30

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current DC

Open Base

VCEO

VEBO

-20

-6

Volts

Amps

Open Collector

-5

Peak Collector Current

Total Power Dissipation

Storage Temperature

ICM

-10

1.0

Amps

TA ≤ 25^OC; Note 1

PTOT

TSTG

-55 to +150

^oC

Junction Temperature

+150

^oC

Operating Ambient Temperature

TAMB

-55 to +150

2007-05

Note

1. Transistor mounted on ceramic substrate by 40mmX40mmx0.7mm.

12 3

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