Datasheet > 2SB1386PTPGP

2SB1386PTPGP

更新时间： 2024-11-19 09:10:23

品牌	Logo	应用领域
力勤 - CHENMKO		/
页数	文件大小	规格书
3页	154K
描述
Transistor,

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中文翻译

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数据手册

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2SB1386PTPGP 数据手册

CHENMKO ENTERPRISE CO.,LTD

2SB1386PT

SMALL FLAT

PNP Epitaxial Transistor

VOLTAGE 20 Volts CURRENT 5 Amperes

APPLICATION

* Power driver and Strobe Flash .

FEATURE

* Small flat package. (SC-62/SOT-89)

SC-62/SOT-89

* Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)

* PC= 2.0W (mounted on ceramic substrate).

* High saturation current capability.

4.6MAX.

1.7MAX.

1.6MAX.

0.4+0.05

MARKING

* hFE Classification P : P86

Q : Q86

+0.08

0.45-0.05

+0.08

0.40-0.05

R: R86

1.50+0.1

1 Base

2 Collector ( Heat Sink )

3 Emitter

CIRCUIT

Dimensions in millimeters

SC-62/SOT-89

MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )

RATINGS

CONDITION

Open Emitter

SYMBOL

VCBO

UNITS

Volts

2SB1386PT

Collector - Base Voltage

-30

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current DC

Open Base

VCEO

VEBO

-20

-6

Volts

Amps

Open Collector

-5

Peak Collector Current

Total Power Dissipation

Storage Temperature

ICM

-10

2.0

Amps

TA ≤ 25^OC; Note 1

PTOT

TSTG

-55 to +150

^oC

Junction Temperature

+150

^oC

Operating Ambient Temperature

TAMB

-55 to +150

2004-11

Note

1. Transistor mounted on ceramic substrate by 40mmX40mmx0.7mm.

12 3

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