Datasheet > 2SB1386_05

2SB1386_05

更新时间： 2024-11-18 07:30:03

品牌	Logo	应用领域
WEITRON		晶体晶体管局域网
页数	文件大小	规格书
4页	209K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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中文翻译

获取价格

数据手册

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2SB1386_05 数据手册

2SB1386

PNP EPITAXIAL PLANAR TRANSISTOR

P b

Lead(Pb)-Free

1. BASE

2. COLLECTOR

3. EMITTER

Features:

SOT-89

* Excellent DC Current Gain Characteristics

* Low V (Sat)

Mechanical Data:

* Case : Molded Plastic

ABSOLUTE MAXIMUM RATINGS(T =25ºC)

Rating

Symbol

Value

Unit

-30

Collector to Base Voltage

CBO

-20

-6

CEO

Collector to Emitter Voltage

Collector to Base Voltage

Collector Current

EBO

-5

T = 25°C

0.5

+150

Total Device Disspation

Junction Temperature

Storage Temperature

˚C

-55 to +150

Tstg

˚C

WEITRON

http://www.weitron.com.tw

1/4

28-Oct-05

12 3 4

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