Datasheet > 2SB1386

2SB1386

更新时间： 2024-11-18 18:10:03

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	604K
描述
SOT-89

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中文翻译

获取价格

数据手册

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2SB1386 数据手册

2SB1386

BIPOLAR TRANSISTOR (PNP)

FEATURES

 Complementary to 2SD2098

 Excellent h_FELinearity

 Low Collector Saturation Voltage

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

-30

Unit

Collector-Base Voltage

Collector-Emitter Voltage

-20

Emitter-Base Voltage

-6

Continuous Collector Current

-5

ICP

Pusled Collector Current

-10

Collector Power Dissipation

500

°C

Junction Temperature

Storage Temperature

*Single pulse,Pw=10ms

150

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I_C=-50uA，I_E=0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-30

-20

-6

V(BR)CEO

V(BR)EBO

I_CBO

I_C=-1mA，I_B=0

I_E=-50uA，I_C=0

V_CB=-20V, I_E=0

V_EB=-5V, I_C=0

-0.5

390

-1

Emitter cut-off current

I_EBO

V_CE=-2V, I_C=-500mA

I_C=-4A，I_B=-100mA

DC current gain

h_FE

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

V_CE=-6V,I_C=-50mA,f=30

120

MHz

V_CB=-20V, I_E=0, f=1

Collector output capacitance

C_ob

MHz

CLASSIFICATION OF h_FE

Rank

Range

82-180

BHP

120-270

BHQ

180-390

BHR

Marking

1 / 4

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中文翻译

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