2SB1373

更新时间： 2024-01-22 09:07:08

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	227K
描述
isc Silicon PNP Power Transistor

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2SB1373 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SB1373

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -160V(Min)

·Wide Area of Safe Operation

·Complement to Type 2SD2066

APPLICATIONS

·Designed for high power amplifications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-160

-5

UNIT

Collector Current-Continuous

Collector Current-Pulse

-12

I_CP

-20

Collector Power Dissipation

@ T_C=25℃

120

P_C

Collector Power Dissipation

@ T_a=25℃

2.5

T_J

Junction Temperature

150

℃

Storage Temperature Range

-55~150

T_stg

isc Website：www.iscsemi.cn

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