2SB1334

更新时间： 2024-11-19 06:20:35

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	232K
描述
isc Silicon PNP Power Transistor

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2SB1334 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SB1334

DESCRIPTION

·High Collector Current:: I_C= -4A

·Low Collector Saturation Voltage

: V_CE(sat)= -1.5V(Max)@I_C= -3A

·Wide Area of Safe Operation

·Complement to Type 2SD1778

APPLICATIONS

·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-80

UNIT

-60

-5

Collector Current-Continuous

Collector Current-Peak

-4

I_CM

-6

Total Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

中文翻译

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2SB1334A/E	ROHM	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1334A/EF	ROHM	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
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