是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
Reach Compliance Code: | compliant | 风险等级: | 5.65 |
最大集电极电流 (IC): | 3 A | 配置: | SINGLE |
最小直流电流增益 (hFE): | 120 | JESD-30 代码: | R-PSSO-F3 |
JESD-609代码: | e2 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 2 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN COPPER |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1308T100R | ETC |
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BJT | |
2SB1308T101 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1308T101/P | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1308T101/PQ | ROHM |
获取价格 |
Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1308T101/PR | ROHM |
获取价格 |
Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1308T101/Q | ROHM |
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Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1308T101/QR | ROHM |
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Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1308T101P | ROHM |
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3000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR | |
2SB1308T101Q | ROHM |
获取价格 |
3000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR | |
2SB1308T101R | ROHM |
获取价格 |
3000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR |