Datasheet > 2SB1308

2SB1308

更新时间： 2024-10-31 14:53:51

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	2328K
描述
SOT-89-3L

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数据手册

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2SB1308 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

2SB1308

TRANSISTOR (PNP)

1. BASE

FEATURES

2. COLLECTOR

Power Transistor

Excellent DC current Gain

Low Collector-emitter Saturation Voltage

3. EMITTER

MARKING

BFP

BFQ

BFR

Solid dot = Green molding compound device.

180–390

82–180

120–270

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-30

Unit

Equivalent Circuit

Collector-Emitter Voltage

-20

Emitter-Base Voltage

-6

Collector Current

-3

P_C

Collector Power Dissipation

500

℃/W

℃

R_θJA

T_J,T_stg

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

250

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=-50µA,I_E=0

Min

-30

-20

-6

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-1mA,I_B=0

I_E=-50µA,I_C=0

V_CB=-20V,I_E=0

-0.5

µA

Emitter cut-off current

I_EBO

V_EB=-5V,I_C=0

DC current gain

h_FE

V_CE=-2V, I_C=-0.5A

I_C=-1.5A,I_B=-0.15A

V_CB=-20V,I_E=0, f=1MHz

390

Collector-emitter saturation voltage

Collector output capacitance

V_CE(sat)

C_ob

-0.45

V^CE=-6V,IC=-50mA,

f=30MHz

f_T

120

MHz

Transition frequency

CLASSIFICATION OF h_FE

RANK

RANGE

82–180

BFP

120–270

BFQ

180–390

BFR

MARKING

www.jscj-elec.com

Rev. - 2.3

12 3 4

中文翻译

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