Datasheet > 2SB1308

2SB1308

更新时间： 2024-11-23 12:32:43

品牌	Logo	应用领域
TYSEMI		晶体晶体管
页数	文件大小	规格书
1页	76K
描述
Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A.

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2SB1308 数据手册

Product specification

2SB1308

Features

Low saturation voltage, typically

V^CE(sat)= -0.45V (Max.) at I^C/I^B= -1.5A / -0.15A.

Excellent DC current gain characteristics.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-30

-20

-6

Collector current

-3

-5

Collector current(Pulse)

Collector power dissipation

Junction temperature

Storage temperature

I^CP*

P^C

0.5

150

T^stg

-55 to +150

* Single pulse, Pw=10ms

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

Testconditons

Min

-30

-20

-6

Typ

Max

Unit

BV^CBOI^C=-50ìA

BV^CEOI^C=-1mA

BV^EBOI^E=-50ìA

I^CBO

I^EBO

h^FE

V^CB=-20V

V^EB=-5V

V^CE=-2V, I^C=-0.5A

-0.5

ìA

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

390

V^CE(sat)I^C=-1.5A,I^B=-0.15A

-0.45

Transition frequency

C^ob

f^T

VCE=-6V, IE=50mA, f=100MHz

V^CB=-20V, I^E=0A, f=1MHz

120

MHz

Output capacitance

hFE Classification

Marking

Rank

hFE

82 180

120 270

180 390

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