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2SB1306T103/Q PDF预览

2SB1306T103/Q

更新时间: 2024-11-19 21:05:03
品牌 Logo 应用领域
罗姆 - ROHM 开关晶体管
页数 文件大小 规格书
2页 101K
描述
Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, Plastic/Epoxy, 3 Pin, TO-92L, 3 PIN

2SB1306T103/Q 技术参数

生命周期:Obsolete零件包装代码:TO-92L
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.84
最大集电极电流 (IC):5 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):120
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
VCEsat-Max:1 VBase Number Matches:1

2SB1306T103/Q 数据手册

 浏览型号2SB1306T103/Q的Datasheet PDF文件第2页 

与2SB1306T103/Q相关器件

型号 品牌 获取价格 描述 数据表
2SB1306T103/QR ROHM

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Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, Plastic/E
2SB1306T103/R ROHM

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Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, Plastic/E
2SB1306T103P ROHM

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Si, POWER TRANSISTOR, TO-92, TO-92L, 3 PIN
2SB1306T103Q ROHM

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Si, POWER TRANSISTOR, TO-92, TO-92L, 3 PIN
2SB1306T103R ROHM

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Si, POWER TRANSISTOR, TO-92, TO-92L, 3 PIN
2SB1307M ETC

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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SIP
2SB1307M/P ROHM

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Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon
2SB1307M/PQ ROHM

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Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon
2SB1307M/PR ROHM

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Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon
2SB1307M/Q ROHM

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Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon