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2SB1292 PDF预览

2SB1292

更新时间: 2024-11-06 06:18:43
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 129K
描述
Silicon PNP Power Transistors

2SB1292 数据手册

 浏览型号2SB1292的Datasheet PDF文件第2页浏览型号2SB1292的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SB1292  
DESCRIPTION  
·
·With TO-220Fa package  
·Low saturation voltage  
·Complement to type 2SD1832  
·Excellent DC current gain characteristics  
·Wide area of safe operation  
APPLICATIONS  
·For use in low frequency power amplifier  
applications,power drivers and DC-DC  
converters  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
2
Collector  
Base  
3
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voage  
Collector-emitter voltage  
Emitter-base voltage  
CONDITIONS  
Open emitter  
VALUE  
-60  
UNIT  
V
V
V
A
A
Open base  
-60  
Open collector  
-5  
Collector current (DC)  
Collector current-Peak  
-5  
ICM  
-10  
TC=25  
Ta=25℃  
30  
PC  
Collector power dissipation  
W
2
Junction temperature  
Storage temperature  
150  
-55~150  
Tj  
Tstg  

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