2SB1289

更新时间： 2024-09-30 06:20:35

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
2页	232K
描述
isc Silicon PNP Power Transistor

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2SB1289 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SB1289

DESCRIPTION

·High Collector Current:: I_C= -7A

·Low Collector Saturation Voltage

: V_CE(sat)= -1.0V(Max)@I_C= -4A

·Wide Area of Safe Operation

·Complement to Type 2SD1580

APPLICATIONS

·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-80

UNIT

-80

-5

Collector Current-Continuous

Collector Current-Peak

-7

I_CM

-10

Total Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

中文翻译

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与2SB1289相关器件

型号	品牌	获取价格	描述	数据表
2SB1289/D	ROHM	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1289/DE	ROHM	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1289/DF	ROHM	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1289/E	ROHM	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1289/EF	ROHM	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1289/F	ROHM	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1289C7	ROHM	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1289C7/D	ROHM	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1289C7/DF	ROHM	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1289C7/E	ROHM	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti