是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-92 | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.92 | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 90 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 1 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 120 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1288P | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-92 | |
2SB1288Q | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-92 | |
2SB1288R | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-92 | |
2SB1289 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB1289 | ISC |
获取价格 |
isc Silicon PNP Power Transistor | |
2SB1289/D | ROHM |
获取价格 |
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
2SB1289/DE | ROHM |
获取价格 |
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
2SB1289/DF | ROHM |
获取价格 |
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
2SB1289/E | ROHM |
获取价格 |
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
2SB1289/EF | ROHM |
获取价格 |
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti |