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2SB1275-P PDF预览

2SB1275-P

更新时间: 2024-01-24 00:58:39
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4页 1615K
描述
PNP Transistors

2SB1275-P 数据手册

 浏览型号2SB1275-P的Datasheet PDF文件第2页浏览型号2SB1275-P的Datasheet PDF文件第3页浏览型号2SB1275-P的Datasheet PDF文件第4页 
SMD Type  
Transistors  
PNP Transistors  
2SB1275  
TO-252  
Unit: mm  
+0.15  
-0.15  
6.50  
+0.1  
-0.1  
2.30  
+0.8  
-0.7  
+0.2  
5.30  
-0.2  
Features  
0.50  
High voltage :VCEO= -160V  
Suitable for Middle Power Driver  
Complementary to 2SD1918  
0.127  
max  
+0.1  
-0.1  
0.80  
0.1  
0.1  
0.60+-  
1 Base  
2.3  
4.60  
+0.15  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
Unit  
VCBO  
VCEO  
VEBO  
-160  
-160  
-5  
V
Collector Current - Continuous  
Collector Current - Pulse  
I
C
-1.5  
-3  
A
I
CP  
Collector Power Dissipation  
Tc = 25°C  
Ta = 25°C  
10  
P
C
W
1
Junction Temperature  
T
J
150  
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
-160  
-160  
-5  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= -100 uAI  
Ic= -1 mA, RBE=∞  
= -100 uAI =0  
CB= -120V , I =0  
EB= -4V , I =0  
E=0  
I
E
C
I
CBO  
EBO  
V
V
E
-1  
-1  
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
DC current gain  
V
CE(sat)  
BE(sat)  
I
I
C
=-1 A, I  
B
=-100 mA  
=-100 mA  
-2  
V
C
=-1 A, I  
B
-1.2  
180  
hFE  
V
V
V
CE= -5V, I  
CB= -10V, I  
CE= -5V, I = 100 mA,f=30MHz  
C= -100 mA  
82  
Collector output capacitance  
Transition frequency  
C
ob  
T
E= 0,f=1MHz  
30  
50  
pF  
f
E
MHz  
Classification of hfe  
Type  
2SB1275-P  
82-180  
Range  
1
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