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2SB1274 PDF预览

2SB1274

更新时间: 2024-09-23 20:27:47
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鲁光 - LGE /
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2页 712K
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2SB1274 技术参数

极性:PNPCollector-emitter breakdown voltage:60
Collector Current - Continuous:3DC current gain - Min:70
DC current gain - Max:280Transition frequency:100
Package:TO-220ABStorage Temperature Range:-55-150
class:Transistors

2SB1274 数据手册

 浏览型号2SB1274的Datasheet PDF文件第2页 
2SB1274(PNP)  
TO-220 Transistor  
TO-220  
1. BASE  
2. COLLECTOR  
3. EMITTER  
3
2
1
Features  
—
—
Wide ASO (Adoption of MBIT process).  
Low saturation voltage.  
High reliability.  
—
—
High breakdown voltage.  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
-60  
Units  
V
Dimensions in inches and (millimeters)  
Collector- Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-60  
V
-6  
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
-3  
A
PC  
2
W
TJ  
150  
-55-150  
Tstg  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
-60  
-60  
-6  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC =-1mA, IE=0  
V(BR)CEO IC=-5mA, IB=0  
V(BR)EBO IE=-1mA, IC=0  
V
V
ICBO  
IEBO  
VCB=-40V, IE=0  
VEB=-4V, IC=0  
-0.1  
-0.1  
280  
μA  
μA  
Emitter cut-off current  
hFE(1)  
hFE(2)  
VCE(sat)  
VCE=-5V, IC=-500mA  
VCE=-5V, IC=-3A  
70  
20  
DC current gain  
Collector-emitter saturation voltage  
IC=-2A, IB=-200mA  
-1  
-1  
V
Base-emitter voltage  
Transition frequency  
Collector output capacitance  
CLASSIFICATION OF hFE(1)  
Rank  
VBE  
fT  
VCE=-5V, IC=-500mA  
VCE=-5V, IC=-500mA  
VCB=-10V, IE=0, f=1MHz  
V
100  
60  
MHz  
pF  
Cob  
Q
R
S
Range  
70-140  
100-200  
140-280  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  

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