Datasheet > 2SB1261R

2SB1261R

更新时间： 2024-11-19 17:01:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	418K
描述
60V,3A,Medium Power PNP Bipolar Transistor

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数据手册

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2SB1261R 数据手册

PNP Silicon Epitaxial Planar Transistor

2SB1261R

Features



Epitaxial planar die construction

High h_FE

Low V_CE(sat)

Mechanic al Data



Case: SOT-223

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-223

Ordering Information

Part Number

Package

SOT-223

Shipping Quantity

Marking Code

B1261

2SB1261R

4000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Peak)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

-60

-7

Unit

-3

I_CM

-5

Base Current

I_B

-0.5

Thermal Characteristics

Parameter

Power Dissipation

Symbol

P_D

Value

1.1

Unit

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Lead ^*1

Junction Temperature

R_θJA

R_θJC

R_θJL

T_J

°C/W

°C

-55 ~ +150

Storage Temperature Range

T_STG

°C

Note 1: The data tested by surface mounted on a 25.4mm * 25.4mm * 1mm FR4-epoxy P.C.B

STM0585A: September 2022

www.gmesemi.com

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