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2SB1261-Z PDF预览

2SB1261-Z

更新时间: 2024-11-21 14:52:31
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
3页 1103K
描述
TO-251

2SB1261-Z 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.54
Base Number Matches:1

2SB1261-Z 数据手册

 浏览型号2SB1261-Z的Datasheet PDF文件第2页浏览型号2SB1261-Z的Datasheet PDF文件第3页 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
TO-251-3L Plastic-Encapsulate Transistors  
TO-251-3L  
2SB1261-Z TRANSISTOR (PNP)  
FEATURES  
1. BASE  
z
z
High hFE  
2. COLLECTOR  
3. EMITTER  
Low VCE(sat)  
ꢀꢁꢂꢃꢄꢅꢆ  
Equivalent Circuit  
B1261-Zꢀ'ꢁ#ꢂ"ꢁꢃ"ꢄꢅꢁꢃ  
ꢆꢄꢇꢂꢅꢃꢅꢄꢈꢀꢉꢊꢁꢁ ꢃ!ꢄꢇꢅꢂ  ꢃ"ꢄ!ꢋꢄꢌ ꢅꢃꢅꢁ#ꢂ"ꢁ$ꢃ   
ꢂ(ꢃ ꢄ ꢁ$ꢈ)ꢁꢃ ꢄꢊ!ꢍꢇꢃꢅꢁ#ꢂ"ꢁ  
XXXX=Code  
B1261-Z  
XXXX  
MAXIMUM RATINGS (Ta=25 unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Value  
-60  
-60  
-7  
Unit  
V
V
V
Collector Current -Continuous  
Collector Power Dissipation  
-3  
A
PD  
1
W
Operation Junction and  
Storage Temperature Range  
TJ,Tstg  
-55-150  
www.jscj-elec.com  
1
Rev. - 2.1