Datasheet > 2SB1241I

2SB1241I

更新时间： 2024-10-15 17:00:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	497K
描述
80V,1A,General Purpose PNP Bipolar Transistor

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中文翻译

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数据手册

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2SB1241I 数据手册

Power Transistor

2SB1241I 2SB1241D

Features

Lead-free



High breakdown voltage and high current

Good h_FElinearty

Low V_CE(sat)

Mechanic al Data



Case: TO-251, TO-252

Molding compound: UL flammability classification rating 94V-0

Terminal s: Tin-plated; solderability per MIL-STD-202, Method 208

TO-251

TO-252

Ordering Information

Part Number

2SB1241I□

Package

Shipping Quantity

Marking Code

B1241I

TO-251

TO-252

80pcs / Tube

2SB1241D□

80pcs / Tube or 2500pcs / Tape & Reel

B1241D

Note for □: none is for Lead-free package

“G” is for Halogen Free package.

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Pulse) ^*1

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

-80

-5

Unit

-1

I_CM

-2

Thermal Characteristics

Parameter

Power Dissipation (Collector) ^*2

Junction Temperature

Symbol

P_C

Value

Unit

T_J

-55 ~ +150

°C

Storage Temperature Range

T_STG

°C

Notes:

1. Single pulse, Pw=100ms.

2. Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.

STM0373A: December 2019

www.gmesemi.com

12 3 4 5

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