Datasheet > 2SB1218A-R

2SB1218A-R

更新时间： 2024-11-21 01:09:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1144K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1218A-R 数据手册

SMD Type

Transistors

PNP Transistors

2SB1218A

■ Features

● High DC Current Gain

● Complementary to 2SD1819A

1 Base

2 Emitter

3 Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-45

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

-45

-7

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

-100

150

℃/W

RΘJA

833

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-45

-7

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector-emitter cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -2 mA, I =0

= -100μA， IC=0

E=0

ICBO

ICEO

EBO

CB= -40V , I

CE= -20V , I

EB= -5V , I

-0.1

-10

-0.1

-0.5

-1.2

460

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-100 mA, I

=-10mA

=-100 mA, I

hFE

CE= -10V, I

CB= -10V, I

^CE= -10V, I

= -2 mA

160

Collector output capacitance

Transition frequency

E= 0,f=1MHz

2.7

= 1 mA,f=200MHz

MHz

■ Classification of hfe

Type

Range

Marking

2SB1218A-Q

160-260

2SB1218A-R

210-340

2SB1218A-S

290-460

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2SB1218GQ	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
2SB1218G-Q	PANASONIC	获取价格	100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, SMINI3-F2, 3 PIN
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2SB1218G-S	PANASONIC	获取价格	100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, SMINI3-F2, 3 PIN
2SB1218H	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon