Datasheet > 2SB1216

2SB1216

更新时间： 2024-10-03 17:00:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	416K
描述
100V,4A,General Purpose PNP Bipolar Transistor

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中文翻译

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数据手册

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2SB1216 数据手册

PNP Epitaxial Planar Silicon Transistors

2SB1216I 2SB1216

Features



Fast switching speed

Low collector-to-emitter saturation voltage

Good linearity of h_FE

Small and slim package facilitating compactness of sets

Mechanical Data



Case: TO-251, TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-251

TO-252

Ordering Information

Part Number

2SB1216I

Package

Shipping Quantity

Marking Code

B1216

TO-251

TO-252

80 pcs / Tube

2SB1216

80 pcs / Tube or 2500 pcs / Tape & Reel

B1216

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Pulse)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

-120

-100

-6

Unit

-4

I_CM

-8

Thermal Characteristics

Parameter

Power Dissipation(T_A= 25°C )

Junction Temperature

Symbol

P_D

Value

Unit

T_J

-55 ~ +150

°C

Storage Temperature Range

T_STG

°C

STM0329A: July 2023 [1.2]

www.gmesemi.com

12 3 4 5

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与2SB1216相关器件

型号	品牌	获取价格	描述	数据表
2SB1216_1	SANYO	获取价格	High-Current Switching Applications
2SB1216_15	KEXIN	获取价格	PNP Transistors
2SB1216G-X-TF3-T	UTC	获取价格	HIGH CURRENT SWITCHIG APPLICATIONS
2SB1216I	BL Galaxy Electrical	获取价格	100V,4A,General Purpose PNP Bipolar Transistor
2SB1216L-X-TF3-T	UTC	获取价格	HIGH CURRENT SWITCHIG APPLICATIONS
2SB1216Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 4A I(C) \| TO-252
2SB1216-Q	KEXIN	获取价格	PNP Transistors
2SB1216Q(TP)	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,100V V(BR)CEO,4A I(C),TO-251VAR
2SB1216Q(TP-FA)	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,100V V(BR)CEO,4A I(C),TO-252VAR
2SB1216QTP	ONSEMI	获取价格	SMALL SIGNAL TRANSISTOR