5秒后页面跳转
2SB1215_15 PDF预览

2SB1215_15

更新时间: 2024-11-19 01:05:27
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
4页 987K
描述
PNP Transistors

2SB1215_15 数据手册

 浏览型号2SB1215_15的Datasheet PDF文件第2页浏览型号2SB1215_15的Datasheet PDF文件第3页浏览型号2SB1215_15的Datasheet PDF文件第4页 
SMD Type  
Transistors  
PNP Transistors  
2SB1215  
TO-252  
Unit: mm  
+0.15  
-0.15  
6.50  
+0.1  
-0.1  
2.30  
+0.8  
-0.7  
+0.2  
5.30  
-0.2  
0.50  
Features  
Low collector-to-emitter saturation voltage.  
High current and high f  
Fast switching time.  
T
0.127  
max  
+0.1  
-0.1  
0.80  
Complementary to 2SD1815  
0.1  
0.1  
0.60+-  
1 Base  
2.3  
4.60  
+0.15  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
Unit  
VCBO  
VCEO  
VEBO  
-120  
-100  
-6  
V
Collector Current - Continuous  
Collector Current - Pulse  
I
C
-3  
A
I
CP  
-6  
20  
Collector Power Dissipation  
Tc = 25℃  
P
C
W
1
Junction Temperature  
T
J
150  
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
-120  
-100  
-6  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= -100 μAI  
Ic= -1 mA, RBE=∞  
= -100μAI =0  
CB= -100V , I =0  
EB= -5V , I =0  
E=0  
I
E
C
I
CBO  
EBO  
V
V
E
-1  
uA  
V
I
C
-1  
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=-1.5 A, I  
B=-150mA  
-0.2  
-0.9  
-0.5  
-1.2  
400  
V
C
=-1.5 A, I  
B=-150mA  
V
V
CE= -5V, I  
CE= -5V, I  
C= -500 mA  
70  
40  
DC current gain  
hFE  
C= -2 A  
Turn-ON Time  
t
on  
100  
800  
50  
See specified Test Circuit  
ns  
Storage Time  
t
stg  
Fall Time  
t
f
Collector output capacitance  
Transition frequency  
C
ob  
T
V
V
CB= -10V, I  
CE= -10V, I  
E
= 0,f=1MHz  
40  
pF  
f
C
= -500 mA  
130  
MHz  
Classification of hfe(1)  
Type  
2SB1215-Q 2SB1215-R 2SB1215-S 2SB1215-T  
70-140 100-200 140-280 200-400  
Range  
1
www.kexin.com.cn  

与2SB1215_15相关器件

型号 品牌 获取价格 描述 数据表
2SB1215-D SANYO

获取价格

High-Current Switching Applications
2SB1215Q ETC

获取价格

TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 3A I(C) | TO-252
2SB1215-Q KEXIN

获取价格

PNP Transistors
2SB1215R ETC

获取价格

TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 3A I(C) | TO-252
2SB1215-R KEXIN

获取价格

PNP Transistors
2SB1215R(TP) ONSEMI

获取价格

TRANSISTOR,BJT,PNP,100V V(BR)CEO,3A I(C),TO-251VAR
2SB1215RTP ONSEMI

获取价格

Small Signal Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TP, 4 PI
2SB1215RTP-FA ONSEMI

获取价格

Small Signal Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 4
2SB1215S ETC

获取价格

TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 3A I(C) | TO-252
2SB1215-S KEXIN

获取价格

PNP Transistors