Datasheet > 2SB1204R-HAF

2SB1204R-HAF

更新时间： 2024-11-21 14:53:19

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	780K
描述
功率三极管

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2SB1204R-HAF 数据手册

2SB1204R-HAF

PNP Silicon Epitaxial Planar Power Transistor

Features

• Low collector-to-emitter saturation voltage

• High current and high f_T

• Excellent linearity of h_FE

• Fast switching speed

• Halogen and Antimony Free(HAF), RoHS compliant

1.Base 2.Collector 3.Emitter

TO-252 Plastic Package

Applications

• For power switching and amplifier applications

• Relay drivers, high-speed inverters, converters, and

other general high-current switching applications

Absolute Maximum Ratings (T_a= 25

unless otherwise specified )

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

-I_CP

Power Dissipation

P_D

Power Dissipation

T_c= 25

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

Unit

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ¹⁾

R_θJA

125

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 5

Dated: 08/03/2023 Rev: 04

12 3 4 5

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