是否无铅: | 不含铅 | 生命周期: | End Of Life |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.65 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 200 | JEDEC-95代码: | TO-251 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e6 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 20 W |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Bismuth (Sn/Bi) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 130 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SB1203T-E | ONSEMI |
完全替代 |
Bipolar Transistor, -50V, -5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA, DPAK / TP-FA, 500-B | |
2SA2039-H | ONSEMI |
类似代替 |
双极晶体管,-50V,-5A,低 VCE (sat),(PNP)NPN 单 TP/TP-F | |
2SA2039-E | ONSEMI |
类似代替 |
Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1203-TL | ONSEMI |
获取价格 |
Bipolar Transistor | |
2SB1203-TL-Q | ONSEMI |
获取价格 |
TRANSISTOR 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TP-FA, 3 PIN, BIP General Purp | |
2SB1203-TL-S | ONSEMI |
获取价格 |
TRANSISTOR 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TP-FA, 3 PIN, BIP General Purp | |
2SB1203-TL-T | ONSEMI |
获取价格 |
TRANSISTOR 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TP-FA, 3 PIN, BIP General Purp | |
2SB1203T-TL-E | ONSEMI |
获取价格 |
Bipolar Transistor 50V, (â)5A, Low VCE(sat) | |
2SB1203T-Tl-H | ONSEMI |
获取价格 |
Bipolar Transistor 50V, (â)5A, Low VCE(sat) | |
2SB1204 | TYSEMI |
获取价格 |
Low collector-to-emitter saturation voltage. High current and high fT. Excellent linearity | |
2SB1204 | SANYO |
获取价格 |
High-Current Switching Applications | |
2SB1204 | KEXIN |
获取价格 |
High-Current Switching Applications | |
2SB1204 | FOSHAN |
获取价格 |
TO-252 |