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2SB1202R(TO-252) PDF预览

2SB1202R(TO-252)

更新时间: 2024-11-06 15:28:07
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
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1页 256K
描述
Transistor

2SB1202R(TO-252) 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SB1202R(TO-252) 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-252 Plastic-Encapsulate Transistors  
2SB1202 TRANSISTOR (PNP)  
TO-252  
FEATURES  
z
z
z
z
Adoption of FBET,MBIT Processes  
1.BASE  
Large Current Capacity and Wide ASO  
Low Collector-to-Emitter Saturation Voltage  
Fast Switching Speed  
2.COLLECTOR  
3.EMITTER  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
Collector Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-60  
V
-50  
V
-6  
V
Collector Current –Continuous  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
-3  
A
PC  
1
W
TJ  
150  
-55-150  
Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
-60  
-50  
-6  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Ic=-100µA, IE=0  
Ic=-1mA, IB=0  
V
V
IE=-100µA, IC=0  
µA  
µA  
VCB=-40V, IE=0  
-1  
-1  
Emitter cut-off current  
IEBO  
VEB=-4V, IC=0  
hFE(1)  
VCE=-2V, IC=-100mA  
VCE=-2V, IC=-3A  
100  
35  
560  
DC current gain  
hFE(2)  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
V
IC=-2A, IB=-100mA  
VCE=-10V, IC=-50mA  
VCB=-10V, IE=0, f=1MHz  
-0.7  
MHz  
pF  
fT  
150  
39  
Collector output capacitance  
Cob  
CLASSIFICATION OF hFE(1)  
R
S
T
U
Rank  
100-200  
140-280  
200-400  
280-560  
Range  
A,Jun,2011  

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