Datasheet > 2SB1202

2SB1202

更新时间： 2024-11-20 17:00:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	285K
描述
50V,3A,Medium Power PNP Bipolar Transistor

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数据手册

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2SB1202 数据手册

Product Specification

PNP Epitaxial Planar Silicon Transistors

2SB1202

FEATURES



Adoption of FBET, MBIT processes

Large current capacity and wide ASO

Low collector-to-emitter saturation voltage

Fast switching speed

Small and slim package making it easy to

Make 2SB1202-used sets smaller

APPLICATIONS



High-Current Switching Applications

Voltage regulators, relay drivers, lamp drivers,

Electrical equipment



TO-252

Ordering Information

Part Number

Package

Shipping

Marking Code

2SB1202

TO-252

80 pcs / Tube or 2500 pcs / Tape & Reel

B1202

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Volage

V_CBO

-60

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

-50

V_EBO

-6

Collector Current

I_C

-3

Collector Power Dissipation

Junction and Storage temperature range

I_CP

-6

P_C

℃

T_J,T_STG

-55 to +150

STM0655A: December 2017

www.gmesemi.com

12 3 4

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2SB1202_10	UTC	获取价格	HIGH CURRENT SWITCHING APPLICATION
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2SB1202G-R-TM3-T	UTC	获取价格	Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-251, Plastic/
2SB1202G-R-TN3-T	UTC	获取价格	Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/
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2SB1202G-S-TN3-T	UTC	获取价格	Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/
2SB1202G-T-TN3-R	UTC	获取价格	Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/
2SB1202G-X-T6C-K	UTC	获取价格	HIGH CURRENT SWITCHING APPLICATION
2SB1202G-X-TM3-T	UTC	获取价格	HIGH CURRENT SWITCHING APPLICATION