Datasheet > 2SB1201T(TP)

2SB1201T(TP)

更新时间： 2024-11-20 07:43:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	46K
描述
TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-251VAR

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技术参数
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2SB1201T(TP) 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	2 A
配置：	Single	最小直流电流增益 (hFE)：	200
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	15 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SB1201T(TP) 数据手册

Ordering number:ENN2112B

PNP/NPN Epitaxial Planar Silicon Transistors

2SB1201/2SD1801

High-Current Switching Applications

Applications

Package Dimensions

unit:mm

· Voltage regulators, relay drivers, lamp drivers,

electrical equipment.

2045B

[2SB1201/2SD1801]

Features

6.5

5.0

2.3

· Adoption of FBET, MBIT processes.

· Large current capacity and wide ASO.

· Low collector-to-emitter saturation voltage.

· Fast switching speed.

0.5

· Small and slim package making it easy to make

2SB1201/2SD1801-used sets smaller.

0.85

0.7

1.2

0.6

0.5

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

2.3

unit:mm

2044B

[2SB1201/2SD1801]

6.5

2.3

5.0

0.5

0.85

0.6

1.2

0 to 0.2

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP-FA

2.3

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

10904TN (KT)/92098HA (KT)/8259MO/4137KI/4076KI, TS No.2112–1/5

12 3 4 5

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与2SB1201T(TP)相关器件

型号	品牌	获取价格	描述	数据表
2SB1201T-E	ONSEMI	获取价格	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
2SB1201T-TL-E	ONSEMI	获取价格	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
2SB1201U	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 2A I(C) \| TO-252
2SB1201-U	KEXIN	获取价格	PNP Transistors
2SB1201U(TP-FA)	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-252VAR
2SB1202	TYSEMI	获取价格	Low collector-to-emitter saturation voltage. Fast switching speed.
2SB1202	KEXIN	获取价格	PNP Transistors
2SB1202	SANYO	获取价格	High-Current Switching Applications
2SB1202	UTC	获取价格	HIGH CURRENT SWITCHING APPLICATION
2SB1202	BL Galaxy Electrical	获取价格	50V,3A,Medium Power PNP Bipolar Transistor

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