Datasheet > 2SB1201S(TP)

2SB1201S(TP)

更新时间： 2024-10-30 14:39:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	46K
描述
TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-251VAR

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SB1201S(TP) 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	2 A
配置：	Single	最小直流电流增益 (hFE)：	140
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	15 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SB1201S(TP) 数据手册

Ordering number:ENN2112B

PNP/NPN Epitaxial Planar Silicon Transistors

2SB1201/2SD1801

High-Current Switching Applications

Applications

Package Dimensions

unit:mm

· Voltage regulators, relay drivers, lamp drivers,

electrical equipment.

2045B

[2SB1201/2SD1801]

Features

6.5

5.0

2.3

· Adoption of FBET, MBIT processes.

· Large current capacity and wide ASO.

· Low collector-to-emitter saturation voltage.

· Fast switching speed.

0.5

· Small and slim package making it easy to make

2SB1201/2SD1801-used sets smaller.

0.85

0.7

1.2

0.6

0.5

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

2.3

unit:mm

2044B

[2SB1201/2SD1801]

6.5

2.3

5.0

0.5

0.85

0.6

1.2

0 to 0.2

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP-FA

2.3

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

10904TN (KT)/92098HA (KT)/8259MO/4137KI/4076KI, TS No.2112–1/5

12 3 4 5

中文翻译

下载PDF

与2SB1201S(TP)相关器件

型号	品牌	获取价格	描述	数据表
2SB1201S(TP-FA)	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-252VAR
2SB1201S-E	ONSEMI	获取价格	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
2SB1201S-TL-E	ONSEMI	获取价格	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
2SB1201T	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 2A I(C) \| TO-252
2SB1201-T	KEXIN	获取价格	PNP Transistors
2SB1201T(TP)	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-251VAR
2SB1201T-E	ONSEMI	获取价格	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
2SB1201T-TL-E	ONSEMI	获取价格	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
2SB1201U	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 2A I(C) \| TO-252
2SB1201-U	KEXIN	获取价格	PNP Transistors

与2SB1201S(TP)相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

19
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

20
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

45
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

52

产品中心

服务支持

精选活动

关于我们

帮助中心

2SB1201S(TP)

2SB1201S(TP) 技术参数

2SB1201S(TP) 数据手册

与2SB1201S(TP)相关器件

与2SB1201S(TP)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SB1201S(TP)

2SB1201S(TP) 技术参数

2SB1201S(TP) 数据手册

与2SB1201S(TP)相关器件

与2SB1201S(TP)相关文章

您还可以找

您在本页遇到什么问题？