Datasheet > 2SB1201-U

2SB1201-U

更新时间： 2024-11-20 01:05:27

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1591K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1201-U 数据手册

SMD Type

Transistors

PNP Transistors

2SB1201

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

5.30

-0.2

0.50

■ Features

●Low collector-to-emitter saturation voltage.

● Fast switching speed.

● Large current capacity and wide ASO.

● Complementary to 2SD1801

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-60

-50

-6

Collector Current - Continuous

Collector Current - Pulse

-2

-4

Collector Power Dissipation

Tc = 25℃

℃

0.8

150

Junction Temperature

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-60

-50

-6

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA, RBE=∞

= -100μA， I =0

CB= -50V , I =0

EB= -5V , I =0

E=0

CBO

EBO

-0.1

-0.7

-1.2

560

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-1 A, I

=-50mA

-0.3

-0.9

=-1 A, I

CE= -2V, I

= -100 mA

= -1.5 A

100

DC current gain

hFE

Turn-ON Time

450

See specified Test Circuit

Storage Time

stg

Fall Time

Collector output capacitance

Transition frequency

^CB= -10V, I

^CE= -10V, I

= 0,f=1MHz

= -50mA

150

MHz

■ Classification of hfe(1)

Type

2SB1201-R 2SB1201-S 2SB1201-T 2SB1201-U

Range

100-200 140-280 200-400 280-560

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