Datasheet > 2SB1197

2SB1197

更新时间： 2024-11-18 18:09:27

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	396K
描述
SOT-23

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中文翻译

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数据手册

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2SB1197 数据手册

2SB1197

BIPOLAR TRANSISTOR (PNP)

FEATURES

 Complementary to 2SD1781

 Low Collector-emitter saturation voltage

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

-40

Unit

Collector-Base Voltage

Collector-Emitter Voltage

-32

Emitter-Base Voltage

-5

Collector Current

-800

200

150

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

I_CBO

Parameter

Min Typ Max Unit

Conditions

I_C= -50uA，I_E=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-40

-32

-5

I_C= -1mA，I_B=0

I_E= -50uA，I_C=0

V_CB= -20V, I_E=0

-0.5

390

-0.5

Emitter cut-off current

I_EBO

uA V_EB= -4V, I_C=0

V_CE= -3V, I_C= -100mA

I_C= -500mA，I_B= -50mA

DC current gain

h_FE

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

V_CE= -5V,I_C= -50mA,f=100

50 200

MHz

V_CE= -10V, I_E=0, f=1

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

Range

82-180

AHP

120-270

AHQ

180-390

AHR

Marking

1 / 4

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