Datasheet > 2SB1197

2SB1197

更新时间： 2023-12-06 20:08:21

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	586K
描述
SOT-23

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB1197 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

2SB1197 TRANSISTOR (PNP)

SOT-23

FEATURES

Unit : mm

1. BASE

Low V_CE(sat).V_CE(sat)<-0.5V(I_C/ I_B= -0.5A /-50mA)

2. EMITTER

3. COLLECTOR

I_C=-0.8A.

Complements the 2SD1781.

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

-40

Unit

-32

-5

Collector Current -Continuous

Collector Power Dissipation

-0.8

200

P_C

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-40

-32

-5

I_C=-50μA, I_E=0

I_C= -1mA, I_B=0

I_E= -50μA, I_C=0

V_CB=-20V,I_E=0

-0.5

390

-0.5

μA

Emitter cut-off current

I_EBO

V_EB= -4V,I_C=0

DC current gain

h_FE

V_CE=-3V,I_C= -100mA

I_C=-500 mA, I_B= -50mA

Collector-emitter saturation voltage

V_CE(sat)

V_CE=-5V, I_C= -50mA,

f=100MHz

Transition frequency

200

MHz

f_T

Collector output capacitance

C_ob

V_CB=-10V,I_E=0,f=1MHz

CLASSIFICATION OF h^FE

Rank

82-180

AHP

120-270

180-390

Range

AHQ

AHR

Marking

www.jscj-elec.com

Rev. - 2.0

12 3 4

下载PDF

与2SB1197相关器件

型号	品牌	描述	获取价格	数据表
2SB1197/K-Q	KEXIN	PNP Transistors	获取价格
2SB1197_07	WEITRON	PNP General Purpose Transistors	获取价格
2SB1197_0712	BL Galaxy Electrical	Silicon Epitaxial Planar Transistor	获取价格
2SB1197_10	SECOS	PNP Epitaxial Planar Transistor	获取价格
2SB1197_15	KEXIN	PNP Transistors	获取价格
2SB1197A	PANJIT	SOT-23	获取价格