Datasheet > 2SB1188U

2SB1188U

更新时间： 2023-12-06 20:03:35

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	247K
描述
功率三极管

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2SB1188U 数据手册

2SB1188U

PNP Silicon Epitaxial Planar Power Transistor

Medium power transistor

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current - DC

Collector Current - Pulse

-I_C

-I_CP

P_W= 100 ms

0.5 ¹⁾

P_C

Collector Power Dissipation

2 ²⁾

℃

Junction Temperature

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

Unit

250 ¹⁾

Thermal Resistance from Junction to Ambient

62.5 ²⁾

℃/W

Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 5

Dated: 01/06/2023 Rev: 04

12 3 4 5

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