Datasheet > 2SB1187

2SB1187

更新时间： 2024-11-25 05:56:43

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
3页	49K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB1187 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1187

DESCRIPTION

·With TO-220Fa package

·Low saturation voltage

·Complement to type 2SD1761

·Excellent DC current gain characteristics

·Wide safe operating area

APPLICATIONS

·For low frequency power

amplifier applications

PINNING

DESCRIPTION

Emitter

Collector

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CONDITIONS

Open emitter

VALUE

-80

UNIT

Open base

-60

Open collector

-5

Collector current (DC)

Collector current-Peak

-3

I_CM

-6

T_C=25℃

T_a=25℃

P_C

Collector power dissipation

Junction temperature

Storage temperature

150

-55~150

℃

T_j

T_stg

12 3

中文翻译

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与2SB1187相关器件

型号	品牌	获取价格	描述	数据表
2SB1187_15	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1187_2014	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1187D	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1187E	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1187F	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1188	TYSEMI	获取价格	Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)
2SB1188	WILLAS	获取价格	SOT-89 Plastic-Encapsulate Transistors
2SB1188	UTC	获取价格	MEDIUM POWER LOW VOLTAGE TRANSISTOR
2SB1188	HTSEMI	获取价格	TRANSISTOR(PNP)
2SB1188	KEXIN	获取价格	Medium Power Transistor