2SB1186E

更新时间： 2024-09-23 13:04:11

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	129K
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中文翻译

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数据手册

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2SB1186E 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1186

DESCRIPTION

·With TO-220Fa package

·Low collector saturation votlage

·Complement to type 2SD1763

·High breakdown voltage

APPLICATIONS

·For use in low frequency power

amplifer applications

PINNING

DESCRIPTION

Emitter

Collector

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector -emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-120

-5

UNIT

Open base

Open collector

-1.5

I_CM

Collector current-peak

-3.0

T_a=25℃

T_C=25℃

2.0

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55~150

12 3

中文翻译

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与2SB1186E相关器件

型号	品牌	获取价格	描述	数据表
2SB1187	JMNIC	获取价格	Silicon PNP Power Transistors
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2SB1187	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB1187	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1187_15	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1187_2014	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1187D	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1187E	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1187F	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1188	TYSEMI	获取价格	Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)