Datasheet > 2SB1182

2SB1182

更新时间： 2024-04-09 19:00:33

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	264K
描述
32V,2A,Medium Power PNP Bipolar Transistor

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2SB1182 数据手册

Product specification

Medium Power Transistor

2SB1182

FEATURES



Low V_CE(sat).

Lead-free

V_CE(sat)=-0.5V(Typ)(I_C/I_B=-2A/-0.2A)

Complements the 2SD1758.

APPLICATIONS



Epitaxial planar type.

PNP silicon transistor.

TO-252

Ordering Information

Part Number

Package

Shipping

Marking Code

2SB1182□

TO-252

80/Tube or2500/Tape Reel

B1182

□: none is for Lead Free package;

“G” is for Halogen Free package.

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Volage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

-40

-32

-5

-2(DC)

-3(Pulse)

1.5

Collector Current

I_C

Collector Power Dissipation

P_C

Junction and Storage temperature range

T_j,T_stg

-55 to +150

℃

STM0007A

www.gmesemi.com

12 3 4

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与2SB1182相关器件

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2SB1182/PQ	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1182/PR	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1182/Q	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1182/QR	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1182/R	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1182_15	UTC	获取价格	MEDIUM POWER LOW VOLTAGE TRANSISTOR
2SB1182D	SECOS	获取价格	PNP Silicon General Purpose Transistor
2SB1182F5	ROHM	获取价格	Transistor,
2SB1182F5/P	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1182F5/PR	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,