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2SB1182 PDF预览

2SB1182

更新时间: 2024-11-06 14:53:27
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
5页 2284K
描述
TO-252-2L

2SB1182 数据手册

 浏览型号2SB1182的Datasheet PDF文件第2页浏览型号2SB1182的Datasheet PDF文件第3页浏览型号2SB1182的Datasheet PDF文件第4页浏览型号2SB1182的Datasheet PDF文件第5页 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
TO-252-2L Plastic-Encapsulate Transistors  
2SB1182 TRANSISTOR (PNP)  
TO-252-2L  
FEATURES  
Power Dissipation  
1.BASE  
2.COLLECTOR  
3EMITTER  
2
1
3
ꢀꢁꢂꢃꢄꢅꢆ  
Equivalent Circuit  
B1182ꢀ'ꢁ#ꢂ"ꢁꢃ"ꢄꢅꢁꢃ  
ꢆꢄꢇꢂꢅꢃꢅꢄꢈꢀꢉꢊꢁꢁ ꢃ!ꢄꢇꢅꢂ  ꢃ"ꢄ!ꢋꢄꢌ ꢅꢃꢅꢁ#ꢂ"ꢁ$ꢃ   
ꢂ(ꢃ ꢄ ꢁ$ꢈ)ꢁꢃ ꢄꢊ!ꢍꢇꢃꢅꢁ#ꢂ"ꢁ  
XXXX=Code  
B1182  
XXXX  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector- Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Value  
-40  
Unit  
V
-32  
V
-5  
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
-2  
A
PC  
1.5  
W
TJ  
150  
-55-150  
Tstg  
Storage Temperature  
www.jscj-elec.com  
1
Rev. - 1.1  

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