Datasheet > 2SB1172_15

2SB1172_15

更新时间： 2024-02-24 05:32:04

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科信 - KEXIN		/
页数	文件大小	规格书
2页	1227K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1172_15 数据手册

SMD Type

Transistors

PNP Transistors

2SB1172

TO-252

Unit: mm

■ Features

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

5.30

-0.2

0.50

● High forward current transfer ratio hFE which

has satisfactory linearity

● Low collector-emitter saturation voltage V^CE(sat)

● Complementary to 2SD1742

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector current -Pulse

Collector Power Dissipation

Ta = 25℃

Symbol

Rating

-60

-5

Unit

VCBO

VCEO

VEBO

-3

-5

℃

1.3

150

Junction Temperature

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -30 mA, I =0

= -100μA， I =0

CB= -60V , I =0

Min

-60

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector-emitter cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

CES

-0.1

-200

-300

-0.1

-1.2

-1.5

-1.8

250

CE = −60 V, I

CE = −30 V, I

= 0

CEO

EBO

EB= -5V , I

C=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-3 A, I

=-375mA

C=-3 A, I

CE= -4V, I

C= -3 A

C= -1 A

C= -3 A

DC current gain

hFE

Turn-ON Time

Storage Time

Fall Time

0.5

1.2

0.3

= −1 A, IB1 = −100 mA, IB2 = 100

stg

mA ^CC= −50 V

Transition frequency

^CE= -10V, I

C= -500mA,f=10MHz

MHz

■ Classification of hfe(1)

Type

2SB1172-Q

70-150

2SB1172-P

120-250

Range

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与2SB1172_15相关器件

型号	品牌	获取价格	描述	数据表
2SB1172A	TYSEMI	获取价格	High forward current transfer ratio hFE which has satisfactory linearity.
2SB1172A	PANASONIC	获取价格	Silicon PNP epitaxial planar type
2SB1172A	KEXIN	获取价格	Silicon PNP Epitaxial Planar Type
2SB1172A_15	KEXIN	获取价格	PNP Transistors
2SB1172AH	PANASONIC	获取价格	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1172AP	PANASONIC	获取价格	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1172A-P	KEXIN	获取价格	PNP Transistors
2SB1172AQ	PANASONIC	获取价格	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1172A-Q	KEXIN	获取价格	PNP Transistors
2SB1172AR	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 3A I(C) \| TO-221VAR