Datasheet > 2SB1163S

2SB1163S

更新时间： 2024-02-14 17:49:50

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
3页	122K
描述
Transistor

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2SB1163S 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1163

DESCRIPTION

·With TO-3PL package

·Complement to type 2SD1718

·Excellent linearity of h_FE

·Wide area of safe operation (ASO)

·High transition frequency f_T

APPLICATIONS

·For high power amplifier applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PL) and symbol

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-180

-5

UNIT

Open emitter

Open base

Open collector

-15

I_CM

Collector current-peak

-25

3.5

P_C

Collector power dissipation

T_C=25℃

150

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55~150

12 3

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